Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs

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Authors	SCHMIDBAUER Martin UGUR Asli WOLLSTEIN C. HATAMI Fariba KATMIS Ferhat CAHA Ondřej MASSELINK W. T.
Year of publication	2012
Type	Article in Periodical
Magazine / Source	Journal of Applied Physics
MU Faculty or unit	Central European Institute of Technology
Citation
web	http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no
Doi	https://doi.org/10.1063/1.3677995
Field	Solid matter physics and magnetism
Keywords	LAYERS; ENHANCEMENT; GAINP; DOTS
Description	The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry.
Related projects:	Physical and chemical properties of advanced materials and structures Strain engineering in diluted magnetic semiconductors Struktura, elektronová struktura a optická odezva pokročilých materiálů