Electrical Properties of SiOxHyCz Coatings Prepared by PECVD

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Authors	FRANCLOVÁ Jana KUČEROVÁ Zuzana BURŠÍKOVÁ Vilma
Year of publication	2005
Type	Article in Proceedings
Conference	15th Symposium on Aplications of Plasma Processes
MU Faculty or unit	Faculty of Science
Citation
Field	Plasma physics
Keywords	thin films; electrical properties
Description	It is well known that MIM structures exhibit various high-field processes, which may be either electrode-limited (e.g. tunneling, Schottky-barrier emission) or bulk-limited (e.g. space-charge-limited conduction, Poole-Frenkel conduction) [1]. Thin films prepared using PECVD exhibited Pool-Frenkel conductivity at lower voltages and tunnelling at higher voltages. This behaviour was indicated by a linear dependence of lnI on U1/2 or lnI on 1/U, where I is the current and U is the applied voltage.
Related projects:	Study and application of plasma chemical reactions in non-isothermic low temperature plasma and its interaction with solid surface