Zařízení pro měření tloušťky polovodičových vrstevnatých struktur SOI

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Title in English	Apparatus to measure thickness of SOI semiconductor layered structures
Authors	MÜNZ Filip HUMLÍČEK Josef
Year of publication	2014
Type	Legally protected outcomes
MU Faculty or unit	Faculty of Science
web	http://spisy.upv.cz/UtilityModels/FullDocuments/FDUM0027/uv027013.pdf
Description	Technical solution targets measurements of thickness of SOI layered semiconductor structures through optical means in VIS/NIR range with precision of 30 nm in 1-10 micron range; it comprises a light source, optical fibers, scanner, spectrometer, control electronics and computer
Related projects:	Struktury SOI pro pokročilé polovodičové aplikace