Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction

Warning

This publication doesn't include Institute of Computer Science. It includes Faculty of Science. Official publication website can be found on muni.cz.

Authors	MEDUŇA Mojmír CAHA Ondřej KEPLINGER Mario STANGL Julian BAUER Günther MUSSLER Gregor GRÜTZMACHER Detlev
Year of publication	2009
Type	Article in Periodical
Magazine / Source	Physica stat.sol.(a)
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	interdiffusion; x-ray diffraction; multilayers
Description	We have investigated SiGe/Si multilayers with Ge content 70% and 90% annealed in-situ at temperatures in the range 600-700 C by x-ray diffraction.
Related projects:	Physical and chemical properties of advanced materials and structures Nucleation and growth of oxygen precipitates in silicon Strain engineering in diluted magnetic semiconductors