Infrared Response of Heavily Doped p-type Si and SiGe Alloys from Ellipsometric Measurements

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Authors	HUMLÍČEK Josef KŘÁPEK Vlastimil
Year of publication	2005
Type	Article in Proceedings
Conference	CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	silico-germanium alloys; infrared ellipsometry
Description	We report here ellipsometric spectra of Si and SiGe alloys heavily doped with boron. In the mid-infrared range, the response can be separated into the contributions of free-hole plasma and direct intervalence transitions. The first contribution extrapolates correctly to the zero-frequency resistance, the second is in a good agreement with the 8-band k.p calculation.
Related projects:	Physical and chemical properties of advanced materials and structures