Morphological instability in InAs/GaSb superlattices due to interfacial bonds

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Authors	LI J H STOKES D W CAHA Ondřej AMMU S L BAI J. BASSLER K E MOSS S C
Year of publication	2005
Type	Article in Periodical
Magazine / Source	Physical Review Letters
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	STRAINED-LAYER SUPERLATTICES; MOLECULAR-BEAM EPITAXY; SURFACE-DIFFUSION; MU-M; GROWTH; LATTICE
Description	Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds.
Related projects:	Physical and chemical properties of advanced materials and structures