Actinometry for understanding PECVD of thin films from O2/HMDSO plasmas

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Authors	ŠMÍD Radek ZAJÍČKOVÁ Lenka BURŠÍKOVÁ Vilma
Year of publication	2005
Type	Article in Proceedings
Conference	Proceedings of the XXVII ICPIG
MU Faculty or unit	Faculty of Science
Citation
web	http://www.icpig2005.nl/cd/D:/Proceedings_ICPIG_2005.html
Field	Plasma physics
Keywords	actinometry; HMDSO; optical emission spectroscopy
Description	We applied actinometry for the calculation of dissociation degree in oxygen CCP discharges used for the deposition from O2/HMDSO plasmas. Dissociation degree exhibited a slight increase with increasing r.f. power and maximum of 20% for 5 Pa of oxygen. This relatively high value was not enough for deposition of SiO2-like films because the HMDSO percentage in the feed was too high at this low oxygen partial pressure. Rapid decrease of dissociation degree to 2-4% for higher oxygen flow rates, i.e. higher pressures resulted in still insufficient oxidation of film precursors.
Related projects:	Study and application of plasma chemical reactions in non-isothermic low temperature plasma and its interaction with solid surface Synthesis of new Si-O(N)-C materials by plasmachemical methods