SiO2/Si etching in atmospheric pressure hydrogen DBD plasma

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Authors	KRUMPOLEC Richard ČECH Jan ČERNÁK Mirko
Year of publication	2015
Type	Conference abstract
MU Faculty or unit	Faculty of Science
Citation
Description	The SiO2/Si etching was studied in DCSBD discharge generated in pure hydrogen at atmospheric pressure and room temeperature conditions. The estimated etching rate of SiO2 was approx. 1 nm/min.
Related projects:	CEPLANT - Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy