Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates

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Authors	ISA Fabio PEZZOLI Fabio ISELLA G. MEDUŇA Mojmír FALUB C.V. MÜLLER E. KREILIGER Thomas TABOADA A. G. VON KAENEL Hans MIGLIO Leo
Year of publication	2015
Type	Article in Periodical
Magazine / Source	Semiconductor Science and Technology
MU Faculty or unit	Central European Institute of Technology
Citation
Doi	https://doi.org/10.1088/0268-1242/30/10/105001
Field	Solid matter physics and magnetism
Keywords	multiple quantum wells; silicon germanium; photoluminescence; epitaxy; crystal quality
Description	In this work we address three-dimensional heterojunctions, demonstrating that photoluminescence from defect-free, Ge/SiGe multiple quantum well (MQW) micro-crystals grown on deeply patterned Si(001) and Si(111) substrates exhibit similar radiative intensity and analogous spectral shape.
Related projects:	CEITEC - Central European Institute of Technology Support of Excellence Research Teams in the Field of Nanotechnologies and Microtechnologies CEITEC - open access