Three Dimensional Heteroepitaxy: A New Path For Monolithically Integrating Mismatched Materials With Silicon

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Authors	FALUB Claudiu Valentin KREILIGER Thomas TABOADA A. ISA Fabio CHRASTINA Daniel ISELLA G. MULLER E. MEDUŇA Mojmír BERGAMASCHINI R. MARZEGALLI Anna BONERA E. PEZZOLI F. MIGLIO Leo NIEDERMANN P. NEELS A. PEZOUS A. KAUFMANN R. DOMMANN A. VON KAENEL Hans
Year of publication	2012
Type	Article in Proceedings
Conference	2012 International Semiconductor Conference (CAS) Vols 1 and 2
MU Faculty or unit	Central European Institute of Technology
Citation
web	http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6400698
Doi	https://doi.org/10.1109/SMICND.2012.6400698
Field	Solid matter physics and magnetism
Keywords	monolithic integration; high quality Ge; elimination of cracking; threading-dislocation densities; epitaxial necking; patterned Si substrates; electrical properties
Description	In the quest for a Ge x-ray detector monolithically integrated onto a Si-CMOS chip we developed a novel method for combining dissimilar materials that may provide a solution to the main problems of heteroepitaxy, e.g. high threading dislocation densities, wafer bowing and cracks.
Related projects:	Physical and chemical properties of advanced materials and structures CEITEC - Central European Institute of Technology Support of Excellence Research Teams in the Field of Nanotechnologies and Microtechnologies Research4Industry - Budování a rozvoj vědecko-výzkumné spolupráce s výzkumnými a průmyslovými partnery